[17p-W8E_101-1~18] 13.7 Compound and power devices, process technology and characterization

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W8E_101-11] Quantum Relaxation Time from Shubnikov-de Haas Oscillations of 2DEG in AlGaN/AlN/GaN and ScAlN/AlGaN/AlN/GaN Heterostructures

〇Yusuke Wakamoto¹, Koei Kubota¹, Tomoya Okuda³, Takahiko Kawahara², Shigeki Yoshida², Kozo Makiyama², Ken Nakata², Atsushi Kobayashi³, Takuya Maeda¹ (1.UTokyo, 2.Sumitomo Electric Industries, Ltd, 3.Tokyo Univ. of Science)

Keywords:

SdH oscillations,Sputtering method,low-temperature and high-magnetic-field measurement

Scandium aluminum nitride (ScAlN) has garnered significant attention as a promising candidate for novel barrier layer materials in GaN HEMTs. We have previously succeeded in the epitaxial growth of ScAlN on AlGaN/AlN/GaN templates using sputtering techniques. Furthermore, we have characterized the properties of the two-dimensional electron gas (2DEG) through Hall effect measurements, capacitance-voltage (C-V) profiling, and the analysis of Shubnikov-de Haas (SdH) oscillations under low-temperature and high-magnetic-field conditions. In this study, we performed low-temperature, high-magnetic-field measurements on the 2DEG within the AlGaN/AlN/GaN heterostructure prior to ScAlN regrowth. By comparing these quantum transport properties, we aimed to elucidate the detailed scattering mechanisms affecting the 2DEG in these systems. This report discusses our findings and provides insights into the impact of ScAlN integration on electron transport.