[17p-W8E_101-1~18] 13.7 Compound and power devices, process technology and characterization

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[17p-W8E_101-13] Electrical characterization of deep trap states with HEMTs fabricated on GaN substrates

〇Takashi Matsuda¹, Tsutomu Matsuura¹, Hiroaki Hayashi¹ (1.Mitsubishi Electric corp., ATC)

Keywords:

GaN HEMT,Deep trap states

Pursuing better performance and reliability of GaN HEMTs has been demanding increasingly higher crystaline quality of GaN epitaxial layer, yet have few reported the advantage of using free-standing GaN substrates over SiC substrates for RF applications. In this report, both kinds of the substrates were examined to identify the difference in their deep trap distribution, which cnsequently affects the output characteristics and signal distortion of GaN HEMTs.