[17p-W8E_101-1~18] 13.7 Compound and power devices, process technology and characterization

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[17p-W8E_101-14] Dependence of Current Collapse Phenomena on Punch-Through Voltage in GaN-HEMT

〇Yushin Nagai¹, Toru Sugiyama¹, Yiyao Liu¹, Umer Farooq¹, Akira Yoshioka¹ (1.Toshiba Electronic Devices & Storage)

Keywords:

Gallium Nitride,GaN-HEMT,Current Collapse Phenomena

GaN-HEMT is expected to be a next-generation power device that enables high efficiency and miniaturization. However, it faces reliability challenges such as on-resistance variation caused by current collapse phenomena. These phenomena occur when electrons accelerated by the high electric field inside the device are trapped at deep levels in the crystal or at the insulator–semiconductor interface. When the applied voltage approaches the rated voltage, electric field crowding at the drain electrode edge becomes particularly problematic. In this study, we focus on the drain–source voltage at which the depletion layer reaches the drain electrode edge(punch-through voltage V_pt) as an indicator of electric field crowding. We investigate its relationship with current collapse phenomena and present the results of improvements achieved.