[17p-W8E_101-1~18] 13.7 Compound and power devices, process technology and characterization

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[17p-W8E_101-15] Suppression of Current Collapse phenomena in GaN HEMTs by an AlGaN Cap Layer

〇Shugo Nishimura¹, Kazuki Kiyohara¹, Kosuke Miura¹, Takahiro Saito¹, Shintaro Ueda¹, Akira Yoshioka¹ (1.Toshiba Electronic Devices & Storage)

Keywords:

power device,GaN HEMT,current collapse

GaN HEMTs have the issue of current collapse phenomena, wherein electric-field concentration under high-voltage bias causes electron trapping within insulating layers, epitaxial layers, and at their interfaces, leading to an increase in on-state resistance. In this work, we aim to suppress current collapse phenomena by focusing on the AlGaN barrier layer in the AlGaN/GaN structure. We fabricated GaN HEMT devices incorporating a thin AlGaN cap layer with an increased Al composition at the surface, and we report the evaluation results of these devices.