[17p-W8E_101-1~18] 13.7 Compound and power devices, process technology and characterization

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[17p-W8E_101-2] Simple N-polar HEMT Structure on Thick High-Al-Content AlGaN Buffer

〇Takuya Hoshi¹, Yuki Yoshiya¹, Taro Sasaki¹, Hiroki Sugiyama¹, Fumito Nakajima¹ (1.NTT, Inc.)

Keywords:

N-polar GaN-channel HEMT,C-face 4H-SiC substrate,Thick AlGaN buffer