[17p-W8E_101-1~18] 13.7 Compound and power devices, process technology and characterization

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-W8E_101-3] N-polar GaN HEMT with high-resistivity C-doped GaN buffer layer (2)

〇Yuki Yoshiya¹, Takuya Hoshi¹, Taro Sasaki¹, Hiroki Sugiyama¹, Fumito Nakajima¹ (1.NTT Device Technology Labs.)

Keywords:

N-polar GaN HEMT