[17p-W8E_101-1~18] 13.7 Compound and power devices, process technology and characterization

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[17p-W8E_101-4] Effects of Surface Passivation on Electrical Characteristics of N-polar GaN/AlN HEMTs

〇(M1)Nobuteru Hirata¹, Ryosuke Ninoki¹, Zazuli Aina Hiyama¹, Yuya Kitamura¹, Fumiya Yamanaka¹, Amane Hayashiuchi¹, Satoshi Kurai¹, Narihito Okada¹, Youiti Yamada¹ (1.Grad. School of Sci. & Tech. for Innovation.Yamaguthi Univ.)

Keywords:

N-polar GaN/AlN HEMTs,Surface passivation

N-polar GaN/AlN HEMTs have the advantage of low contact resistance; however, surface leakage current remains a major issue. In this study, surface passivation using SiO₂, SiON, and SiN was applied, and the electrical characteristics were comparatively evaluated. The results show that SiO₂ most effectively suppresses the leakage current and provides the highest On/Off ratio. Although SiON shows a certain degree of improvement, the leakage current increases in the case of SiN passivation. These results indicate that SiO₂ is an effective passivation layer for N-polar GaN/AlN HEMTs.