[17p-W8E_101-1~18] 13.7 Compound and power devices, process technology and characterization

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[17p-W8E_101-5] Fabrication method and electrical characteristics of N-polarity GaN/AlGaN HEMTs using the back surface of Ga-polarity growth GaN

〇Rito Akagawa¹, Atsushi Yamada³, Naoki Fujimoto², Jun Taniguchi³, Yuichi Minoura³, Yuta Furusawa², Ryoko Tsukamoto², Maciej Matys³, Manabu Arai², Jun Suda², Yoshio Honda², Atsushi Tanaka², Toshihiro Ohki³, Norikazu Nakamura³, Hiroshi Amano² (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Fujitsu Limited)

Keywords:

Compound Semiconductor Device Process,Device fabricate process,N-polar GaN HEMT

We propose a novel method for fabricating N-channel HEMT devices on GaN samples grown with Ga polarity. This involves removing the substrate via wet etching and dry etching from the substrate side, followed by selective etching using PEC etching to stop at the N-polarity surface. N-polarity HEMTs fabricated using this method exhibited clear modulation of drain current with gate voltage and current saturation characteristics, achieving a maximum output of 400 mA/mm.