[17p-W8E_101-1~18] 13.7 Compound and power devices, process technology and characterization

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W8E_101-9] Demonstration of Extremely Low On-Resistance AlN-based SBDs with Distributed Polarization Doping

〇Issei Sasaki¹, Masanobu Hiroki², Kazuaki Ebata², Kazuyuki Hirama², Yoshitaka Taniyasu², Takuya Maeda¹ (1.UTokyo, 2.NTT-BRL)

Keywords:

DPD,AlN,semiconductor

AlN has a very wide band gap (6.0 eV) and is therefore expected to exhibit a high breakdown electric field, making it a promising material for electronic devices operating under high-temperature and high-voltage conditions. However, a fundamental issue is that donor levels are deep, resulting in a low ionization efficiency at room temperature. In this study, we fabricated AlN-based Schottky barrier diodes (SBDs) on AlN substrates in which the drift layer employs impurity-free distributed polarization doping, and we report the achievement of the lowest on-resistance among previously reported AlN-based devices.