[17p-W8E_307-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W8E_307-4] Characterization of Optical Anisotropy in InAs Quantum Dots Grown on InP Substrates Using a GaAs Insertion Layer

〇(B)Hiroki Inoue¹, Jinkwan Kwoen¹, Masahiro Kakuda¹, Atsushi Matsumoto², Naokatsu Yamamoto², Kouichi Akahane², Yasuhiko Arakawa¹ (1.NanoQuine, Univ. Tokyo, 2.NICT)

Keywords:

quantum dot,quantum dash,optical anisotropy

The quantum dot (QD) structure on InP substrates is of particular interest as a material platform for integration on Si substrates. However, InAs growth on InP substrates is frequently accompanied by quantum dash (QDash) formation, leading to optical anisotropy and consequent changes in optical properties. Here, we demonstrate QD on InP substrates with suppressed QDash formation by employing a thin GaAs insertion layer, and report the characterization of their optical anisotropy.