Session Details

[17p-W8E_307-1~10]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Mar 17, 2026 1:30 PM - 4:15 PM JST
Tue. Mar 17, 2026 4:30 AM - 7:15 AM UTC
W8E_307 (West Bldg. 8)

[17p-W8E_307-1]Wavelength Control of 1100 nm-band InGaAs Quantum Dots by In-Flush Method

〇Daiki Hatakeyama1, Tamami Naruke1, Hideki Matsumoto1, Masaya Nishimoto1, Kenichi Nishi1, Yutaka Onishi1 (1.QD Laser, Inc.)

[17p-W8E_307-2]Influence of Mid-Cap Annealing on the Photoluminescence of InAs Quantum Dots on GaAs(001)

〇(P)Rhenish Simon1, Kazuki Koyama1, Ronel Christian Roca1, Itaru Kamiya1 (1.Toyota Tech. Inst.)

[17p-W8E_307-3]Precise estimation of reference surface morphology in AFM images using a modified Canny method

〇Haruto Okuizumi1, Rhenish Simon1, Ronel Roca1, Itaru Kamiya1 (1.Toyota Tech. Inst.)

[17p-W8E_307-4]Characterization of Optical Anisotropy in InAs Quantum Dots Grown on InP Substrates Using a GaAs Insertion Layer

〇(B)Hiroki Inoue1, Jinkwan Kwoen1, Masahiro Kakuda1, Atsushi Matsumoto2, Naokatsu Yamamoto2, Kouichi Akahane2, Yasuhiko Arakawa1 (1.NanoQuine, Univ. Tokyo, 2.NICT)

[17p-W8E_307-5]Correlation between the Shape and Optical Properties of III–V Quantum Dots Based on Statistical Analysis of Large-Scale AFM and PL Data

〇JINKWAN KWOEN1, Masahiro Kakuda1, Yasuhiko Arakawa1 (1.NanoQuine, U. Tokyo)

[17p-W8E_307-6]Optimization of n-type and p-type doping concentrations in co-doped InAs/GaAs quantum dot lasers for high-temperature operation

〇Masahiro Kakuda1, Jinkwan Kwoen1, Yasuhiko Arakawa1 (1.The Univ. of Tokyo)

[17p-W8E_307-7]Surface slope dependence in kinetic roughening diagram

〇Noriko Akutsu1, Yoshihiro Kangawa1 (1.Research Inst. for Applied Mechanics, Kyushu Univ.)

[17p-W8E_307-8]Subclasses in KPZ-like kinetic roughness and their surface topography characteristics

〇Noriko Akutsu1, Yoshihiro Kangawa1 (1.Research Inst. for Applied Mechanics, Kyushu Univ.)

[17p-W8E_307-9]Step dynamics of biphenyl crystals grown from vapor

〇Harutoshi Asakawa1, Nakatsubo Shunichi5, Terada Tatsuji6, Ito Nozomu6, Ueda Masahiro6, Katsuno Hiroyasu2, Tsukamoto Katsuo7, Yanagiya Shin-ichiro4, Hondoh Hironari3 (1.Yamaguchi Univ., 2.Kanazawa Univ., 3.Univ. of Shizuoka, 4.Tokushima Univ., 5.JAXA-isas, 6.Advanced Technology Institute, Yamaguchi Univ., 7.Tohoku Univ.)

[17p-W8E_307-10]Surface melting of biphenyl crystals

〇Harutoshi Asakawa1, Nakatsubo Shunichi5, Terada Tatsuji6, Ueda Masahiro6, Ito Nozomu6, Katsuno Hiroyasu2, Tsukamoto Katsuo7, Yanagiya Shin-ichiro4, Hondoh Hironari3 (1.Yamaguchi Univ., 2.Kanazawa Univ., 3.Univ. of Shizuoka, 4.Tokushima Univ., 5.JAXA-isas, 6.Advanced Technology Institute, Yamaguchi Univ., 7.Tohoku Univ.)