[17p-W8E_307-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[17p-W8E_307-5] Correlation between the Shape and Optical Properties of III–V Quantum Dots Based on Statistical Analysis of Large-Scale AFM and PL Data

〇JINKWAN KWOEN¹, Masahiro Kakuda¹, Yasuhiko Arakawa¹ (1.NanoQuine, U. Tokyo)

Keywords:

quantum dot,atomic force microscope,photoluminescence

III–V semiconductor quantum dots formed via the Stranski–Krastanov (S–K) growth mode can be directly observed using techniques such as atomic force microscopy (AFM), and it is well known that their optical properties can be tuned through control of the quantum dot shape. However, many previous studies have been limited to analyses of a relatively small number of quantum dots due to constraints in analytical methods and data availability, and comprehensive investigations of correlation relationships common across different material systems have not been sufficiently carried out. In this study, based on AFM images and photoluminescence (PL) measurement results obtained from 1,340 samples grown under various conditions, we statistically investigate the correlation between quantum dot morphology and emission characteristics.