[17p-W9_324-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-10] DLOS Evaluation on the Effect of High-Temperature Annealing on Trap Levels in Ga₂O₃ Thin Films

〇(M2)Jun Morihara¹, Tsukasa Kakio¹, Romualdo A. Ferreyra¹, Junya Yoshinaga^2,3, Takafumi Kamimura⁴, Yoshinao Kumagai², Masataka Higashiwaki^1,4 (1.Osaka Metropolitan Univ., 2.Tokyo Univ. of Agric. and Tech., 3.TAIYO NIPPON SANSO CORPORATION, 4.NICT)

Keywords:

Gallium Oxide,High-Temperature Annealing,Trap level

In this study, deep-level optical spectroscopy (DLOS) evaluation was performed to investigate the effect of high-temperature post-deposition annealing (PDA) on Si-doped Ga₂O₃ thin films grown by MOCVD (010) and HVPE (001). The results showed that for SBD without PDA, trap levels located between mid-gap and valence band were not detected. In contrast, for SBD with PDA, high-density traps were present near E_c - 2.9 eV, regardless of the growth method. This result suggests that high-temperature PDA generated new high-density traps near E_c - 2.9 eV, irrespective of the growth method or surface orientation.