[17p-W9_324-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-11] Observation of Light Propagation in α-Ga₂O₃ Optical Waveguides Fabricated
by Selective Area Growth

〇Keidai Toyoshima¹, Riena Jinno¹, Ryosuke Kizu³, Satoshi Iwamoto^1,2 (1.RCAST, Univ. of Tokyo, 2.IIS, Univ. of Tokyo, 3.AIST)

Keywords:

gallium oxide,ultra-wide bandgap semiconductor,selective area growth

α-Ga₂O₃ is an ultrawide bandgap semiconductor attracting attention as a photonic material which can be epitaxially grown on sapphire substrates. Waveguides fabricated by dry etching have faced challenges due to optical loss caused by sidewall roughness. In this study, waveguides were fabricated by forming facet planes through selective area growth using the Mist CVD. When a 650 nm laser was incident onto the fabricated waveguide, an output spot was observed, demonstrating optical propagation.