[17p-W9_324-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-2] Homoepitaxial growth of twin-free (100)-oriented β-Ga₂O₃ films using vicinal substrates

〇(D)Kazuki koreishi¹, Kohei Yoshimatsu¹, Akira Ohtomo¹ (1.Institute of Science Tokyo)

Keywords:

Gallium oxide,Epitaxial growth,step flow growth

β-Ga₂O₃ has attracted considerable attention as an ultra-wide-bandgap semiconductor; however, on (100)-oriented substrates, the presence of twin defects makes it difficult to achieve high electron mobility. In this study, homoepitaxial growth on (100) vicinal substrates was performed by pulsed laser deposition, demonstrating that increasing the off-cut angle reduces the twin density and enables the growth of twin-free films on 6° off substrates.