[17p-W9_324-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-5] Structural Characterization of Nitrogen-Doped (Al_xGa_1-x)₂O₃ Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

〇(M1)Kohki Tsujimoto¹, Tomoki Uehara¹, Jin Inajima¹, Yusuke Teramura¹, Toshiki Nakaoka¹, Shoma Takeda¹, Satoko Honda¹, Masataka Higashiwaki^1,2 (1.Osaka Metropolitan Univ., 2.NICT)

Keywords:

Gallium Oxide,PAMBE,Aluminum gallium oxide

It is well known that in case of (Al_xGa_1-x)₂O₃ thin films grown by plasma-assisted molecular beam epitaxy, the film crystallinity gets worse when an Al composition x is approximately 0.20 or higher, because of the lattice relaxation. In this study, we investigated whether N-doped (Al_xGa_1-x)₂O₃ thin films with a high Al composition can be grown while maintaining high crystallinity by simultaneously providing N, which has a larger ionic radius than O, and Al, which has a smaller ionic radius than Ga, to mitigate the lattice strain.