[17p-W9_324-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-6] Introduction of acceptors and ALD growth of β-Ga₂O₃ films using rf Nitrogen Plasma

〇Shodai Ata¹, Katsuhiro Furukawa¹, Hisashi Soma¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Metro. Univ.)

Keywords:

Ga2O3,ALD