[17p-W9_324-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-7] Growth of 150 mm β-Ga₂O₃ (001) single-crystal by EFG method

〇SHO HASEGAWA¹, Kimiyoshi Koshi¹, Yuki Ueda¹, Kohei Sasaki¹, Ryoichi Sakaguchi¹, Isao Sakamoto¹, Keita Konishi¹, Makoto Mizui¹, Yu Yamaoka¹, Shinya Watanabe¹, Akito Kuramata¹ (1.NCT Inc.)

Keywords:

Ga2O3,EFG,bulk

Edge-defined film-fed growth (EFG)法による150 mm β-Ga₂O₃ (001)バルク単結晶育成技術を構築し、150 mm (001)基板の製作に成功した。