[17p-W9_324-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-9] Work Function Dependence of Schottky Barrier Height on HVPE-grown β-Ga₂O₃

〇Eito Hatayama¹, Kazutaka Kanegae¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst.Tech)

Keywords:

gallium oxide,Schottky barrier diode,Schottky barrier height

Precise control of the Schottky barrier height is critical for maximizing device performance. In this study, we fabricated Schottky barrier diodes using n-type β-Ga₂O₃ homoepitaxial layers grown by HVPE. By standardizing the substrate's electrical properties, surface treatments, and electrode formation processes, we successfully achieved ideal junction interfaces. Consequently, we demonstrated the controllability of the Schottky barrier height via the metal work function. These results indicate a high degree of flexibility in the design of β-Ga₂O₃ devices.