[18a-M_178-1~11] 17.3 Layered materials

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[18a-M_178-11] Synthesis of Mo thin films on SiO₂/Si(111) surface by hydrogen reduction deposition of MoO₃ molecules

〇Riku Kamei¹, Ryosuke Nishio¹, Izumi Hirokazu², Shin-ichi Honda¹ (1.Univ. of Hyogo, 2.Hyogo Pref. Inst. of Tech)

Keywords:

Hydrogen reduction,Molecular beam epitaxy

This report describes the results of a study on the synthesis of Mo thin films from MoO₃ by hydrogen reduction and deposition. On a SiO₂/Si(111) surface, the film was deposited by simultaneously irradiating MoO₃ from the effusion cell and H₂ from the hydrogen source (HABS 40). The prepared samples were analyzed using XPS and GI-XRD. The results showed that the film consisted of 56% Mo⁰ and 27% Mo²⁺, but the film was amorphous. It is believed that under appropriate deposition conditions, Mo films can be obtained on SiO₂/Si(111) surfaces.