The 73rd JSAP Spring Meeting 2026
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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[18a-M_178-1~11]17.3 Layered materials

Wed. Mar 18, 2026 9:00 AM - 12:00 PM JST
Wed. Mar 18, 2026 12:00 AM - 3:00 AM UTC
M_178 (Main Bldg.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[18a-M_178-1][The 59th Young Scientist Presentation Award Speech] Van der Waals Epitaxy and Strain Engineering of TMDs on Graphene/SiC Substrates

〇Ryotaro Sakakibara1, Kaito Hirata2,3, Yasufumi Takahashi3, Wataru Norimatsu4, Yasumitsu Miyata1,5 (1.NIMS, 2.Nagoya Inst. Tech., 3.Nagoya Univ., 4.Waseda Univ., 5.Tokyo Metro. Univ.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[18a-M_178-2]Solid-Phase Epitaxial Growth of NbSe2/WSe2 Heterostructure

〇Ryotaro Sakakibara1, Ritsuki Okukawa2, Yasumitsu Miyata1,2 (1.NIMS, 2.Tokyo Metro. Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)English Presentation

[18a-M_178-3]Synthesis and Characterization of 2D-MoS2 by Chemical Vapor Deposition (CVD) method

Yuta Watanabe1, Shio Guruge1, Takeaki Sakurai1, 〇Muhammad Monirul Islam1 (1.Tsukuba University)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[18a-M_178-4]Development of 300mm wafer-scaled transition metal dichalcogenide deposition system

〇Takashi Matsumoto1, Jiho Ryu1, Yukihiro Muta1, Masahito Sugiura1 (1.Tokyo Electron Ltd)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[18a-M_178-5]Growth of monolayer WS2 on sapphire substrate by gas-source CVD

〇(M1C)Shunnosuke Murakami1,2, Ryotaro Sakakibara1, Ryutaro Nishino3, Naoya Okada3, Toshifumi Irisawa3, Yasumitsu Miyata1,2 (1.NIMS, 2.Tokyo Metro. Univ., 3.AIST)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-M_178-6]Area selected Gas-source CVD growth of WS2 films on amorphous Al2O3

〇Ryutaro Nishino1, WEN HSIN CHANG1, Naoya Okada1, Toshifumi Irisawa1 (1.AIST SFRC)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[18a-M_178-7]Direct deposition of h-BN on 300mm insulating substrates by gas source plasma CVD

〇Yukihiro Muta1, Masahito Sugiura1, Takashi Matsumoto1 (1.Tokyo Electron Technology Solutions Ltd.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[18a-M_178-8]MoS2 Formation via Three-Step Conversion: Impact of Initial Film Composition

〇Naoya Okada1, Toshifumi Irisawa1, Shinichi Tanabe2, Hitoshi Miura2, Hao Cheng2, Atsuki Fukazawa2, Hiroki Maehara2 (1.SFRC, AIST, 2.TEL)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-M_178-9]Aligned growth of bilayer MoS2 nanoribbons

〇(D)Kaichi Yamamoto1, Pablo Solis Fernandez1, Tseng Yushan2, Aika Uchida1, Haiming Sun3, Yung-Chang Lin4, Kazutomo Suenaga3, Masahiro Hara5, Hiroki Ago1,6 (1.Kyushu Univ., 2.Kumamoto Univ., 3.Osaka Univ., 4.AIST, 5.Kumamoto Univ., 6.Kyushu Univ. CSeDE)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[18a-M_178-10]Fabrication of SnS thin films on mica with sulfur plasma-assisted sputtering.

〇(D)Taichi Nogami1, Issei Suzuki1, Yoshikazu Terai2, Sakiko Kawanishi1,3, Daiki Motai1, Takahisa Omata1 (1.Tohoku Univ., 2.Kyushu Inst. of Tech., 3.Kyoto Univ.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[18a-M_178-11]Synthesis of Mo thin films on SiO2/Si(111) surface by hydrogen reduction deposition of MoO3 molecules

〇Riku Kamei1, Ryosuke Nishio1, Izumi Hirokazu2, Shin-ichi Honda1 (1.Univ. of Hyogo, 2.Hyogo Pref. Inst. of Tech)
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