[18a-M_178-1~11] 17.3 Layered materials

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[18a-M_178-7] Direct deposition of h-BN on 300mm insulating substrates by gas source plasma CVD

〇Yukihiro Muta¹, Masahito Sugiura¹, Takashi Matsumoto¹ (1.Tokyo Electron Technology Solutions Ltd.)

Keywords:

hexagonal boron nitride,2D material,CFET

We are working on the development of highly oriented, large-grain crystal growth technology for hexagonal boron nitride, an atomic layer insulating material, for the development of 2D material CFETs for the Logic A3 generation. We report on the development of a new 300mm h-BN film deposition system using plasma-enhanced CVD to achieve direct deposition of h-BN on insulating film substrates without transition metal catalysts.