[18a-M_178-1~11] 17.3 Layered materials

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[18a-M_178-8] MoS₂ Formation via Three-Step Conversion: Impact of Initial Film Composition

〇Naoya Okada¹, Toshifumi Irisawa¹, Shinichi Tanabe², Hitoshi Miura², Hao Cheng², Atsuki Fukazawa², Hiroki Maehara² (1.SFRC, AIST, 2.TEL)

Keywords:

TMDC,MoS2,CMOS

As prospective channel materials for advanced logic semiconductors, transition metal dichalcogenides (TMDCs), such as MoS₂, have attracted significant attention. A key challenge for their practical implementation lies in establishing reliable methods for the large area fabrication of TMDC films. To address this, we have proposed a MoS₂ synthesis technique referred to as the Three Step Conversion (3SC) process. In this study, we elucidate the influence of the initial film composition in the first processing step on the crystallinity of MoS₂ obtained after the third step treatment.