Presentation Information
[18a-PA3-1]Structural Characterization of Gallium Oxide Thin Films Grown on 4H-SiC Substrates by Mist Chemical Vapor Deposition
〇Taisei Oya1, Kazuyuki Uno1 (1.Wakayama Univ.)
Keywords:
gallium oxide,4H-SiC substrate,mist CVD
Gallium Oxide Thin films were grown on 4H-SiC substrates, whose thermal conductivity is three orders of magnitude higher than that of gallium oxide, using a mist-CVD method.
At a growth temperature of 600 degC, kappa-Ga2O3 was successfully grown, and a small fraction of the beta-phase was also detected. The rocking-curve FWHM of the kappa-phase was 0.949 degree, which is comparable to previously reported values for films grown by MBE and MOCVD. The in-plane rotational mosaic spread was as large as 1.98 degree, suggesting that the film accommodates the large lattice mismatch through in-plane rotational disorder during growth. The RMS surface roughness measured by DFM was 1.34 nm.
In the presentation, we will also report results for growth on the carbon-terminated face and on 4°-off n-type 4H-SiC substrates.
At a growth temperature of 600 degC, kappa-Ga2O3 was successfully grown, and a small fraction of the beta-phase was also detected. The rocking-curve FWHM of the kappa-phase was 0.949 degree, which is comparable to previously reported values for films grown by MBE and MOCVD. The in-plane rotational mosaic spread was as large as 1.98 degree, suggesting that the film accommodates the large lattice mismatch through in-plane rotational disorder during growth. The RMS surface roughness measured by DFM was 1.34 nm.
In the presentation, we will also report results for growth on the carbon-terminated face and on 4°-off n-type 4H-SiC substrates.