Presentation Information
[18a-PA3-10]Fabrication and characterization of Ga-doped rutile GeO2 thin films
〇Fumiyoshi Nishiyama1, Takashi Inomata1, Izumi Hirokazu2 (1.Kisan Kinzoku Chemicals, 2.Hyogo Pref. Inst. of Tech.)
Keywords:
rutile GeO2
Ga-doped rutile GeO2 thin films were fabricated by pulsed laser deposition (PLD).
A seed layer was initially deposited on an m-plane sapphire substrate using a GeO2 target, after which Ga-doped rutile GeO2 thin films with different Ga concentrations were grown using Ga2O3-containing GeO2 targets.In-plane X-ray diffraction (XRD) measurements revealed that the diffraction peak corresponding to the rutile GeO2 (400) plane shifted toward lower angles with increasing Ga doping concentration.Furthermore, after annealing the films at 500°C in an oxygen flow, Raman spectroscopy measurements showed the emergence of a peak around 300 cm-1, which can be attributed to Ge nanoparticles formed by the decomposition of GeOx.
Future work will investigate the annealing oxidation conditions and electrical properties of the Ga-doped GeO2 thin films.
A seed layer was initially deposited on an m-plane sapphire substrate using a GeO2 target, after which Ga-doped rutile GeO2 thin films with different Ga concentrations were grown using Ga2O3-containing GeO2 targets.In-plane X-ray diffraction (XRD) measurements revealed that the diffraction peak corresponding to the rutile GeO2 (400) plane shifted toward lower angles with increasing Ga doping concentration.Furthermore, after annealing the films at 500°C in an oxygen flow, Raman spectroscopy measurements showed the emergence of a peak around 300 cm-1, which can be attributed to Ge nanoparticles formed by the decomposition of GeOx.
Future work will investigate the annealing oxidation conditions and electrical properties of the Ga-doped GeO2 thin films.