[18a-PA3-1~39] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-PA3-25] Characterization of ZnO Film for the Development of TFT on Heat-Resistant Flexible Substrate

〇Waraku Kuroswa¹, Chihiro Washizu¹, Tsutomu Muranaka¹, Yoichi Nabetani¹, Takashi Matsumoto¹ (1.Yamanashi Univ.)

Keywords:

Zinc Oxide,Thin-Film-Transistor,Flexible

As fundamental research toward realizing heat-resistant flexible thin-film transistors (TFTs), ZnO thin films were fabricated on flexible PI substrates using plasma-assisted molecular beam deposition (PAMBD), a low-damage process. Optical methods were employed to measure the film thickness of the fabricated samples, and resistivity measurements were performed using a four-probe method. For crystal structure evaluation, XRD measurements (2θ/ω method) using Cu kα1 radiation were performed to assess the thin film's orientation.