[18a-PA3-1~39] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-PA3-26] In-plane positional dependence of electrical properties
of Zn-added GZO films deposited by sputtering

〇(M1C)Tetsuro Shibata¹, Yasuji Yamada¹, Shuhei Funaki¹, Shiyu Sano¹ (1.Shimane Univ)

Keywords:

semiconductor,ZnO,Flexible substrate