Presentation Information
[18a-PA3-27]Impact of Ambient Atmosphere Control on Transfer Characteristics of In2O3 Thin-Film Transistors Fabricated by a Vacuum-Ultraviolet Excimer-Light-Assisted Solution Process
〇Kazuki Ueda1, Hideya Ochiai1, Takuya Nomura1, Akira Fujimoto1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Akihiro Shimizu2, Toshihiko Maemoto1 (1.Osaka Inst. of Tech., 2.Ushio Inc.)
Keywords:
Oxide semiconductor,Thin-film transistor,Indium oxide
This study investigated the effect of atmosphere control during light irradiation and thermal annealing on the electrical characteristics of In2O3 thin-film transistors (TFTs) fabricated by a vacuum-ultraviolet excimer-light-assisted solution process. As a result, the combination of Dry N2 irradiation and Dry O2 annealing improved the on/off current ratio to over 106, while achieving stabilization of the threshold voltage and a significant reduction in hysteresis. These results indicate that the proposed method is an effective approach for realizing high-performance In2O3 TFTs using a solution-based process.