[18a-PA3-1~39] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-PA3-32] Comparison of gate insulator properties sputter-deposited at room temperature and their implementation in TFTs

〇Ko Ishihara¹, Koga Nakamura¹, Kazuho Ishii¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:

flexible,room temperature,thin film transistor