[18a-PA3-1~39] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-PA3-33] Quantitative Evaluation of Interface State Density in Top-Gate In-Ga-O Nanosheet MOS Capacitors

〇Nao Ogasawara¹, Mutsunori Uenuma², Takanori Takahashi¹, Yukiharu Uraoka¹ (1.NAIST, 2.AIST)

Keywords:

oxide semiconductor,MOS Capacitors,Interface State Density