Presentation Information
[18a-PA3-7]Preferential growth of polar In2O3(100) planes by water vapor-assisted sputtering
〇(B)Tomohiro Sakai1, Yuichiro Ebisawa1, JinHyeok Cha2, Tomohiro Yamaguchi1, Shinya Aikawa1 (1.Kogakuin Univ., 2.Chonnam Univ.)
Keywords:
thin-film transistor (TFT),CO2 sensor,polycrystalline
In this study, we aim to realize a highly sensitive CO2 gas sensor utilizing the polar surface of In2O3, and investigate the effect of water vapor partial pressure during deposition on the growth of the polar (100) surface. In2O3 thin films deposited by RF sputtering under precisely controlled water vapor partial pressures were evaluated by X-ray diffraction. As a result, preferential growth of the In2O3 (100) plane was observed only under specific conditions, suggesting that hydrogen impurities originating from water vapor contribute to the formation of crystal orientation.