[18a-PB4-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18a-PB4-12] Evaluation of the Application of a Microwave-Excited Water Vapor Plasma Ashing Process to Hybrid pMOSFET Fabrication

〇Hiroki Taniguchi^1,2, Tatsuo Ishijima^1,2, Yusuke Nakano^1,2, Yasunori Tanaka^1,2 (1.Kanazawa Univ., 2.EPEL)

Keywords:

plasma,Water Vapor Plasma Ashing,semiconductor

Conventional resist removal methods, namely wet chemical processing (Wet) and oxygen plasma treatment (ICP-O₂), each have inherent drawbacks. To address these issues, we have developed a water vapor plasma ashing (WPA) method. WPA uses only water vapor derived from ultrapure water as the source gas, resulting in low environmental impact and reduced cost. In addition, WPA is expected to suppress device performance degradation caused by thermal damage. In this study, pMOSFETs were fabricated by incorporating three different resist removal processes: Wet, ICP-O₂, and WPA. The applicability of WPA to the pMOSFET fabrication process was evaluated by comparing the I_d-V_g characteristics of the devices.