[18a-S2_203-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[18a-S2_203-1] [The 3rd Kenji Natori Award Speech] The Past, Present, and Future of Power Semiconductors
- Semiconductor technologies are evolving through fusion -

〇Mitsuhiko Kitagawa¹ (1.Retired from Toshiba Electronic Devices & Storage Corporation 2022)

Keywords:

Injection Enhanced Gate Transistor,Injection Enhanced,Insulated Gate Bipolar Transistor

The IEGT (Injection Enhanced Emitter Structure: IE effect), announced in 1993, not only succeeded in reproducing the function of the highly doped emitter diffusion layer of a bipolar device in the geometric arrangement of a MOS structure, but also made it possible to freely add new functions and redesign previous device structures. Looking back at the history of power semiconductors, we will discuss the significance of the IE effect and the future outlook for power semiconductors.