[18a-S2_203-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[18a-S2_203-4] Embedded flash memory using multi-floating gate

〇HIROSHIGE HIRANO¹, HIROAKI KURIYAMA¹, ATSUSHI NOMA¹ (1.Tower Partners Semiconductor Co.,Ltd.)

Keywords:

Embedded nonvolatile memory

In recent years, there has been an increasing request for nonvolatile memory with only of standard logic transistors in order to reduce process costs. However, for low-voltage operation process, leakage current is increase and unavoidable due to thinner gate oxide (Gox) films, and degradation of retention characteristics becomes apparent in memory cells with conventional structures. This report describes the operational challenges and solutions for transistors and memory cells associated with lower voltages.