[18a-W2_401-1~11] 15.4 III-V-group nitride crystals

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[18a-W2_401-1] Surface diffusion length of Ga adatoms estimated from composition and step-height of AlGaN layers grown by metalorganic vapor-phase epitaxy on misoriented GaN (0001) substrates

〇Kazuhiro Mochizuki¹, Tomoyoshi Mishima¹, Fumimasa Horikiri¹, Hiroshi Ohta¹, Tomoaki Nishimura¹ (1.Hosei Univ.)

Keywords:

gallium nitride,surface diffusion,adatom