The 73rd JSAP Spring Meeting 2026
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[18a-W2_401-1~11]15.4 III-V-group nitride crystals

Wed. Mar 18, 2026 9:00 AM - 12:00 PM JST
Wed. Mar 18, 2026 12:00 AM - 3:00 AM UTC
W2_401 (West Bldg. 2)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[18a-W2_401-1]Surface diffusion length of Ga adatoms estimated from composition and step-height of AlGaN layers grown by metalorganic vapor-phase epitaxy on misoriented GaN (0001) substrates

〇Kazuhiro Mochizuki1, Tomoyoshi Mishima1, Fumimasa Horikiri1, Hiroshi Ohta1, Tomoaki Nishimura1 (1.Hosei Univ.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[18a-W2_401-2]Activation energy of surface diffusion of Ga adatoms on GaN (0001) obtained from surface diffusion length on GaN (0001) and reported activation energy of desorption from GaN grown by MBE on GaAs (001)

〇Kazuhiro Mochizuki1, Tomoyoshi Mishima1, Fumimasa Horikiri1, Hiroshi Ohta1, Tomoaki Nishimura1 (1.Hosei Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-W2_401-3]Analysis of fluorine diffusion pathways to a nitrogen vacancy in gallium nitride based on first-principles calculations

〇(M2)Yuki Fujishiro1, Tomoe Yayama1, Takahiro Nagata2, Toyohiro Chikyow2, Fumiko Akagi1 (1.Kogakuin Univ., 2.NIMS)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[18a-W2_401-4]The examination of hole relaxation in p-type GaN based on the time-dependent density functional theory

〇Tomoe Yayama1, Yoshiyuki Miyamoto2 (1.Kogakuin Univ., 2.AIST)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[18a-W2_401-5]Effect of Substrate Constraints on Structural Stability of NbAlN Alloys

〇Takahiro Kawamura1, Toru Akiyama1, Riku Kikuchi2, Souta Kurogi3, Atsushi Kobayashi2,3, Akira Kusaba4, Yoshihiro Kangawa4 (1.Mie Univ., 2.Graduate School, Tokyo Univ. of Science, 3.Tokyo Univ. of Science, 4.RIAM, Kyushu Univ.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[18a-W2_401-6]Fabrication and characterization of Al doped β-Nb2N films grown on AlN by sputtering

〇Yuki Kato1, Takayuki Harada2, Hideto Miyake3, Kazuhisa Ikeda1, Atsushi Kobayashi1 (1.Tokyo Univ. of Science, 2.NIMS, 3.Mie Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[18a-W2_401-7]Epitaxial growth of NbNx thin films on GaN by sputtering

〇Takeru Kodama1, Yuki Kato2, Kazuhisa Ikeda1,2, Atsushi Kobayashi1,2 (1.Tokyo Univ. of Science, 2.Grad. School of Tokyo Univ. of Science)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[18a-W2_401-8]Hydrogen Impurity States in n-type InN Thin Films

〇MASAKI KOBAYASHI1, Yudai Yamashita1, Kazuyuki Hirama1, Yoshitaka Taniyasu1 (1.BRL, NTT, Inc.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[18a-W2_401-9]Influence of He carrier-gas on growth of GaInN by MOVPE

〇Yuki Arai1,2, Saito Tasuke1,3, Honda Tohru2, Imanaka Yasutaka1, Sumiya Masatomo1 (1.NIMS, 2.Kogakuin Univ., 3.University of Tsukuba)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[18a-W2_401-10]Impacts of B precursors on the deep-UV luminescence characteristics of BN thin films grown by metalorganic chemical vapor deposition

〇Kohei Shima1, Haruto Tsujitani1, Moriyuki Kanno1, Shigefusa Chichibu1 (1.IMRAM-Tohoku Univ.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[18a-W2_401-11]h-BN Thin Films Grown on Cu(111) Thin Films on Sapphire Substrates by MBE

〇Atsumu Sugawara1, Hiroto Yokoyama1, Takashi Azuhata1, Hideki Nakazawa1, Masanobu Hiroki2, Kazuyuki Hirama2, Yasuyuki Kobayashi1 (1.Hirosaki Univ., 2.NTT Basic Research Lab.)
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