[18a-W2_401-1~11] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[18a-W2_401-2] Activation energy of surface diffusion of Ga adatoms on GaN (0001) obtained from surface diffusion length on GaN (0001) and reported activation energy of desorption from GaN grown by MBE on GaAs (001)

〇Kazuhiro Mochizuki¹, Tomoyoshi Mishima¹, Fumimasa Horikiri¹, Hiroshi Ohta¹, Tomoaki Nishimura¹ (1.Hosei Univ.)

Keywords:

gallium nitride,surface diffusion,adatom