[18a-W2_401-1~11] 15.4 III-V-group nitride crystals

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[18a-W2_401-8] Hydrogen Impurity States in n-type InN Thin Films

〇MASAKI KOBAYASHI¹, Yudai Yamashita¹, Kazuyuki Hirama¹, Yoshitaka Taniyasu¹ (1.BRL, NTT, Inc.)

Keywords:

III-V Nitride,Photoemission spectroscopy

InN is a semiconductor with a bandgap of approximately 0.65 eV and high electron mobility. Because its bandgap can be tuned into the visible-light region by alloying with GaN, InN is expected to find applications in photovoltaics and high-speed electronic devices. In recent years, we have grown InN thin films by metal-organic vapor-phase epitaxy and confirmed that post-growth annealing in a nitrogen atmosphere reduces both the residual hydrogen concentration and the electron carrier concentration. In this study, to clarify the origin of the annealing-induced changes in electrical conduction properties, we have investigated changes in the electronic states of InN thin films before and after annealing using hard X-ray photoelectron spectroscopy.