[18a-W8E_101-1~12] 13.7 Compound and power devices, process technology and characterization

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-W8E_101-1] Comparative Study on GaN Photoconductive Semiconductor Switch (PCSS)
Utilizing Fe/C Co-doped and Mn-doped Semi-Insulating GaN Substrates

〇Chinwei Li¹, Kenji Iso², Ryosho Nakane¹, Takuya Maeda¹ (1.The University of Tokyo, 2.Mitsubishi Chemical Corporation)

Keywords:

PCSS,power device

We fabricated PCSSs using Fe/C co-doped semi-insulating GaN and compared them with Mn-doped samples. While Si ion implantation yielded comparable and favorable contact characteristics, the photocurrent was limited to approximately 1/40 of that in the Mn-doped samples due to shortened carrier lifetime caused by rapid recombination at Fe levels. On the other hand, the breakdown electric field improved to 0.48 MV/cm compared to the Mn-doped samples but remained below the theoretical limit, indicating a need for future mitigation of surface electric field concentration.