The 73rd JSAP Spring Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[18a-W8E_101-1~12]13.7 Compound and power devices, process technology and characterization

Wed. Mar 18, 2026 9:00 AM - 12:15 PM JST
Wed. Mar 18, 2026 12:00 AM - 3:15 AM UTC
W8E_101 (West Bldg. 8)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-W8E_101-1]Comparative Study on GaN Photoconductive Semiconductor Switch (PCSS)
Utilizing Fe/C Co-doped and Mn-doped Semi-Insulating GaN Substrates

〇Chinwei Li1, Kenji Iso2, Ryosho Nakane1, Takuya Maeda1 (1.The University of Tokyo, 2.Mitsubishi Chemical Corporation)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-W8E_101-2]Temperature dependence of leakage current in ScAlN on GaN/sapphire substrates

〇Kosuke Joya1, Sawaki Sato2, Atsushi Kobayashi2, Takuya Maeda1 (1.UTokyo, 2.TUS)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[18a-W8E_101-3]Characterization of high purity GaN grown using QF-HVPE

〇Shota Kaneki1, Hajime Fujikura1 (1.Sumitomo Chemical)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[18a-W8E_101-4]Positron Induced Luminescence of GaN Substrates

〇FUMIMASA HORIKIRI1, Toshihiro Nakamura1, Kazuo Kuriyama1, Tomoyoshi Mishima1, Tomoaki Nishimura1, Atsushi Kinomura2 (1.Hosei Univ., 2.Kyoto Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[18a-W8E_101-5]Conductivity enhancement in vertical GaN Schottky diodes by changing the δ-doping position
in conductive strained layer superlattices on Si substrates

〇Shoma Nakashima1, Toshiharu Kubo1, Takuma Nanjo1, Takashi Egawa1 (1.Nagoya Inst of Tech.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[18a-W8E_101-6]Electrical characterization of Si-ion-implanted GaN after rapid thermal annealing followed by multiple pulsed laser annealing

〇Takao Miyajima1, Arihiro Nishigaki1, Shuntaro Ono1, Asami Sugimoto1, Yuzuka Minami2, Yoshihiro Shimazaki2, Masamitsu Toramaru2, Yoshito Jin2, Kazuyoshi Tomita3, Daichi Imai1 (1.Meijo Univ., 2.JSW, 3.Nagoya Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-W8E_101-7]Dipole formation by GaOx interfacial layer insertion into n-type GaN Schottky junctions

〇Ryo Sakai1, Masahiro Hara1, Mikito Nozaki1, Takuma Kobayashi1, Heiji Watanabe1 (1.UOsaka)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[18a-W8E_101-8]The structure of very first atomic layer of Ga oxide on GaN at the GaN oxidation front

〇Emi Kano1, Shuto Hattori1, Kenji Shiraishi2, Atsushi Oshiyama2, Tetsuo Narita3, Tetsu Kachi1, Nobuyuki Ikarashi1 (1.Nagoya Univ., 2.Tohoku Univ., 3.Toyota central R&D)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[18a-W8E_101-9]Nanowire fabrication by photo-electro-chemical etching using UVA and UVC light

〇Hisahiro Furuuchi1,2, Taketomo Sato1,2, Junichi Motohisa1,2 (1.Hokkaido Univ. IST, 2.RCIQE)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[18a-W8E_101-10]Effect of Ar Ion Etching on GaN Surfaces in Surface Analysis

〇Takahiko Ikarashi1, Asami Yasui1, Chizuru Asahara1, Haruka Hidaka1, Tomohiro Sakata1 (1.TRC)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-W8E_101-11]Research on Surface Morphology Change of N-polar GaN by Electrochemical Etching

〇(B)Tatsuya Moriyama1, Sogo Yokoi2, Shigeyoshi Usami2, Masayuki Imanishi2, Masafumi Yokoyama3, Naoteru Shigekawa4, Junichi Takino5, Tomoaki Sumi5, Yoshio Okayama5, Mitsuhiko Hata6, Atsushi Tanaka7, Yoshio Honda7, Hiroshi Amano7, Mihoko Maruyama2, Masashi Yoshimura8, Yusuke Mori2 (1.Sch. of Eng., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ., 3.Sumitomo Chemical Co., Ltd., 4.Osaka Metropolitan Univ., 5.Panasonic Holdings Corp., 6.Itochu Plastics Inc., 7.IMaSS Nagoya Univ., 8.ILE, Osaka Univ.)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[18a-W8E_101-12]Selective electrochemical etching of OVPE-GaN substrate from GaN epitaxial layer for fabricating GaN-on-Diamond substrate

〇Masafumi Yokoyama1, Kiyotoshi Iimura1, Tatsuya Moriyama2, Sogo Yokoi3, Shigeyoshi Usami3, Masayuki Imanishi3, Naoteru Shigekawa4, Junichi Takino5, Tomoaki Sumi5, Yoshio Okayama5, Atsushi Tanaka6, Yoshio Honda6, Hiroshi Amano6, Yusuke Mori3 (1.Sumitomo Chemical Co., Ltd., 2.Sch. of Eng., Osaka Univ., 3.Grad. Sch. of Eng., Osaka Univ., 4.Inst. of Eng., Osaka Metropolitan Univ., 5.Panasonic Holdings Corp., 6.IMaSS Nagoya Univ.)
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