[18a-W8E_101-1~12] 13.7 Compound and power devices, process technology and characterization

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[18a-W8E_101-10] Effect of Ar Ion Etching on GaN Surfaces in Surface Analysis

〇Takahiko Ikarashi¹, Asami Yasui¹, Chizuru Asahara¹, Haruka Hidaka¹, Tomohiro Sakata¹ (1.TRC)

Keywords:

GaN,Ar ion etching,XPS