[18a-W8E_101-1~12] 13.7 Compound and power devices, process technology and characterization

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-W8E_101-11] Research on Surface Morphology Change of N-polar GaN by Electrochemical Etching

〇(B)Tatsuya Moriyama¹, Sogo Yokoi², Shigeyoshi Usami², Masayuki Imanishi², Masafumi Yokoyama³, Naoteru Shigekawa⁴, Junichi Takino⁵, Tomoaki Sumi⁵, Yoshio Okayama⁵, Mitsuhiko Hata⁶, Atsushi Tanaka⁷, Yoshio Honda⁷, Hiroshi Amano⁷, Mihoko Maruyama², Masashi Yoshimura⁸, Yusuke Mori² (1.Sch. of Eng., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ., 3.Sumitomo Chemical Co., Ltd., 4.Osaka Metropolitan Univ., 5.Panasonic Holdings Corp., 6.Itochu Plastics Inc., 7.IMaSS Nagoya Univ., 8.ILE, Osaka Univ.)

Keywords:

OVPE-GaN,electrochemical etching,N-polar GaN

We investigated the electrochemical (EC) etching characteristics of N-polar GaN to explore the feasibility of selective etching processes. Experiments were conducted using GaN samples with a wide range of carrier concentrations in an oxalic acid solution under varying applied voltages. In highly doped samples, a morphological transition from porous etching to electropolishing was observed with increasing voltage. These trends are consistent with those of Ga-polar surfaces, demonstrating the feasibility of selective etching of N-polar GaN based on carrier concentration differences.