[18a-W8E_101-1~12] 13.7 Compound and power devices, process technology and characterization

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-W8E_101-2] Temperature dependence of leakage current in ScAlN on GaN/sapphire substrates

〇Kosuke Joya¹, Sawaki Sato², Atsushi Kobayashi², Takuya Maeda¹ (1.UTokyo, 2.TUS)

Keywords:

ScAlN,leakage current,temperature dependence

ScAlN exhibits a wide bandgap, a large piezoelectric response, strong spontaneous polarization, and ferroelectricity, making it a promising material for realizing new functionalities through integration with nitride semiconductor devices. Although device applications based on metal/ScAlN/GaN heterostructures have advanced rapidly in recent years, leakage currents remain relatively large and their physical origin is not yet fully understood. In this study, we investigate how the sputter-growth conditions of ScAlN thin films grown on GaN/sapphire substrates affect the leakage current, and we further examine the temperature dependence of the leakage characteristics.