[18a-W8E_101-1~12] 13.7 Compound and power devices, process technology and characterization

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[18a-W8E_101-5] Conductivity enhancement in vertical GaN Schottky diodes by changing the δ-doping position
in conductive strained layer superlattices on Si substrates

〇Shoma Nakashima¹, Toshiharu Kubo¹, Takuma Nanjo¹, Takashi Egawa¹ (1.Nagoya Inst of Tech.)

Keywords:

semiconductor,GaN,shottoky diode

We have previously fabricated GaN-based vertical devices by forming a conductive Strained Layer Superlattice on Si substrates. In addition, we found that δ-doping in the AlN layers of the conductive Strained Layer Superlattice enhances vertical conductivity, and that the vertical conductivity depends on the position of the δ-doping within the AlN layers. In this study, we attempted to further improve the vertical conductivity by shifting the δ-doped layer from the AlN layers to the GaN layers within the Strained Layer Superlattice.