[18a-W8E_101-1~12] 13.7 Compound and power devices, process technology and characterization

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[18a-W8E_101-6] Electrical characterization of Si-ion-implanted GaN after rapid thermal annealing followed by multiple pulsed laser annealing

〇Takao Miyajima¹, Arihiro Nishigaki¹, Shuntaro Ono¹, Asami Sugimoto¹, Yuzuka Minami², Yoshihiro Shimazaki², Masamitsu Toramaru², Yoshito Jin², Kazuyoshi Tomita³, Daichi Imai¹ (1.Meijo Univ., 2.JSW, 3.Nagoya Univ.)

Keywords:

laser annealing,nitride semiconductor,contact resistance