[18a-W8E_101-1~12] 13.7 Compound and power devices, process technology and characterization

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-W8E_101-7] Dipole formation by GaO_x interfacial layer insertion into n-type GaN Schottky junctions

〇Ryo Sakai¹, Masahiro Hara¹, Mikito Nozaki¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.UOsaka)

Keywords:

GaN,Schottky junction,dipole