[18p-M_178-1~8] 17.3 Layered materials

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-M_178-1] Selenium Vacancy Healing of MoSe₂ using Room-Temperature Plasma Treatment and In-situ Electrical Characterizations

〇(M1)Koki Sawasaki¹, Yasuhiko Hayashi¹, Hiroo Suzuki¹ (1.Okayama Univ.)

Keywords:

Transition Metal Dichalcogenides,Se-vacancy healing,plasma treatment

In recent years, transition metal dichalcogenides (TMDCs) have attracted significant attention as next-generation semiconductor materials; however, TMDCs synthesized by chemical vapor deposition (CVD) often contain chalcogen vacancies, which degrade their physical properties. In this study, we investigated selenium vacancy healing of monolayer MoSe₂ using a plasma-based process at room temperature. Hydrogen plasma treatment with selenium introduction reduced the defect-related Raman D-peak intensity, indicating effective vacancy passivation. Furthermore, in-situ electrical measurements were performed to evaluate modulation of the electrical properties induced by the plasma treatment.