Session Details
[18p-M_178-1~8]17.3 Layered materials
Wed. Mar 18, 2026 2:00 PM - 4:00 PM JST
Wed. Mar 18, 2026 5:00 AM - 7:00 AM UTC
Wed. Mar 18, 2026 5:00 AM - 7:00 AM UTC
M_178 (Main Bldg.)
[18p-M_178-1]Selenium Vacancy Healing of MoSe2 using Room-Temperature Plasma Treatment and In-situ Electrical Characterizations
〇(M1)Koki Sawasaki1, Yasuhiko Hayashi1, Hiroo Suzuki1 (1.Okayama Univ.)
[18p-M_178-2]Selective point-defect imaging in monolayer WSe2 by conductive AFM
〇(M1C)Yuki Shimomura1,2, Yuta Sawai1,2, Ryotaro Sakakibara1, Kenji Watanabe1, Takashi Taniguchi1, Shoji Yoshida3, Yasumitsu Miyata1,2 (1.NIMS, 2.Tokyo Metro. Univ., 3.Tsukuba Univ.)
[18p-M_178-3]Atomic-scale quantitative evaluation of S defects during MOCVD-MoS2 film formation by friction force microscopy
〇Kosei Matsumoto1, Tomonori Nishimura1, Kaito Kanahashi1, Yoshiki Sakuma2, Kosuke Nagashio1 (1.UTokyo, 2.NIMS)
[18p-M_178-4]Study on Substrate Temperature Dependence in the Interface Structure of Monolayer MoS2/Sapphire Using Heated Environmental Photoelectron Spectroscopy
〇Takahiro Nagata1, Yoshiki Sakuma1, Masaaki Kobata2, Tatsuo Fukuda2, Jui-Teng Chang3, Keisuke Atsumi3, Tomonori Nishimura3, Kaito Kanahashi3, Kosuke Nagashio3 (1.NIMS, 2.JAEA, 3.The Univ. of Tokyo)
[18p-M_178-5]Diameter-tunable nanoscrolls from Janus WSSe/WSe2 heterostructures
〇Masahiko Kaneda1,2, Ryotaro Sakakibara1, Wenjin Zhang1, Dingkun Bi3,4, Tianyishan Sun3,4, Hiroto Ogura3,4, Takahiko Endo1, Yuta Takahashi5, Shun Fujii5, Toshiaki Kato3,4, Yasumitsu Miyata1,2 (1.NIMS, 2.Tokyo Metro. Univ., 3.Tohoku Univ., 4.AIMR Tohoku Univ., 5.Keio Univ.)
[18p-M_178-6]Fabrication of Mn-Si-Te ternary films via amorphous crystallization process
〇Fumiya Sano1, Mihyeon Kim1, Shogo Hatayama2, Misako Morota2, Yuta Saito1,2 (1.Tohoku Univ., 2.SFRC, AIST)
[18p-M_178-7]Structural and Electronic Structure Control of Transition Metal Dichalcogenides via Organic Molecule–Assisted Solvothermal Synthesis
〇Hiroki Waizumi1, Ryunosuke Tange1, Seiya Yokokura1, Toshihiro Shimada1 (1.Hokkaido Univ.)
[18p-M_178-8]Hydrophobic Modification of Boron Nitride via Physical Adsorption of Aromatic Compounds to Enhance Resin Compatibility
〇Honami Inobe1, Akitaka Kamauchi1, Teruhiko Saito1, Teppei Hosokawa1 (1.Panasonic Holdings Corp.)
