[18p-M_178-1~8] 17.3 Layered materials

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[18p-M_178-3] Atomic-scale quantitative evaluation of S defects during MOCVD-MoS₂ film formation by friction force microscopy

〇Kosei Matsumoto¹, Tomonori Nishimura¹, Kaito Kanahashi¹, Yoshiki Sakuma², Kosuke Nagashio¹ (1.UTokyo, 2.NIMS)

Keywords:

MOCVD,defect,LFM

TEM, STM, and conductive AFM, which have been widely used for atomic-scale analysis of TMDCs, all require physical transfer from sapphire, an insulating substrate, hindering wafer-scale as-grown evaluation. In this study, we demonstrate the quantitative analysis of S vacancies on the top surface of monolayer MoS₂ formed by MOCVD with high precision and atomic resolution by friction force microscopy. Furthermore, we aim to understand the relationship between the crystal growth mechanism and vacancy introduction.