[18p-M_178-1~8] 17.3 Layered materials

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[18p-M_178-4] Study on Substrate Temperature Dependence in the Interface Structure of Monolayer MoS₂/Sapphire Using Heated Environmental Photoelectron Spectroscopy

〇Takahiro Nagata¹, Yoshiki Sakuma¹, Masaaki Kobata², Tatsuo Fukuda², Jui-Teng Chang³, Keisuke Atsumi³, Tomonori Nishimura³, Kaito Kanahashi³, Kosuke Nagashio³ (1.NIMS, 2.JAEA, 3.The Univ. of Tokyo)

Keywords:

Molybdenum disulfide,Hard X-ray Photoelectron Spectroscopy,interface

To achieve the off state in top-gate transistors of the directly grown MoS₂/sapphire substrate, wet processes were required to remove adsorbed components. In contrast, evaluation of the vacuum-induced thermal desorption process using X-ray photoelectron spectroscopy demonstrated that a dry process is possible at 400°C, which removes the electron injection source and suppresses MoS₂ decomposition. This report further compares samples with different MoS₂ deposition temperatures, revealing differences in desorbed components and interfacial structural changes.